Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method
نویسندگان
چکیده
منابع مشابه
Identification of Prismatic Slip Bands in 4H SiC Boules Grown by Physical Vapor Transport
Transmission electron microscopy (TEM) and KOH etching have been used to study the dislocation structure of 4H SiC wafers grown by physical vapor transport. A new type of threading dislocation arrays was observed. Rows of etch pits corresponding to dislocation arrays were observed in vicinity of micropipes, misoriented grains and polytypic inclusions at the periphery of the boules and extended ...
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Transmission electron microscopy (TEM), high-resolution X-ray di!raction, and KOH etching have been used to study the dislocation structure of 4H SiC crystals grown by the physical vapor transport method. Many of the etch pits on the Si(0 0 0 1) surface form arrays extending along the S11 1 0 0T directions. Plan view conventional and high-resolution TEM show that the arrays consist of pure edge...
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The strength of metal crystals is reduced below the theoretical value by the presence of dislocations or by flaws that allow easy nucleation of dislocations. A straightforward method to minimize the number of defects and flaws and to presumably increase its strength is to increase the crystal quality or to reduce the crystal size. Here, we describe the successful fabrication of high aspect rati...
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Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper.
Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, with an occasional domain having two orientations. Raman spectroscopy revealed the graphene single ...
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ژورنال
عنوان ژورنال: Acta Mechanica Sinica
سال: 2006
ISSN: 0567-7718,1614-3116
DOI: 10.1007/s10409-005-0090-2